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Epitaxial films of semiconducting FeSi2 on (001) silicon

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dc.contributor.authorNathan, Menachem, author
dc.contributor.authorNicolet, Marc-A., author
dc.contributor.authorBai, Gang, author
dc.contributor.authorXinghua, Yan, author
dc.contributor.authorLong, Robert G., author
dc.contributor.authorRobinson, G. Y., author
dc.contributor.authorGeib, Kent M., author
dc.contributor.authorMahan, John E., author
dc.contributor.authorAmerican Institute of Physics, publisher
dc.date.accessioned2007-01-03T08:10:29Z
dc.date.available2007-01-03T08:10:29Z
dc.date.issued1990
dc.description.abstractEpitaxial thin films of the semiconducting transition metal silicide, beta-FeSi2, were grown on (001) silicon wafers. The observed matching face relationship is FeSi2 (100)/Si(001), with the azimuthal orientation being FeSi2 [010]
dc.description.abstractSi〈110〉. This heteroepitaxial relationship has acommon unit mesh of 59 Å2 area, with a mismatch of 2.1%. There is a strong tendency toward island formation within this heteroepitaxial system.
dc.format.mediumborn digital
dc.format.mediumarticles
dc.identifier.bibliographicCitationMahan, John E, et al., Epitaxial Films of Semiconducting FeSi2 on (001) Silicon, Applied Physics Letters 56, no. 21 (21 May 1990): 2126-2128.
dc.identifier.urihttp://hdl.handle.net/10217/67924
dc.languageEnglish
dc.language.isoeng
dc.publisherColorado State University. Libraries
dc.relation.ispartofFaculty Publications
dc.rights©1990 American Institute of Physics.
dc.rightsCopyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright.
dc.titleEpitaxial films of semiconducting FeSi2 on (001) silicon
dc.typeText

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