Epitaxial films of semiconducting FeSi2 on (001) silicon
Date
1990
Authors
Nathan, Menachem, author
Nicolet, Marc-A., author
Bai, Gang, author
Xinghua, Yan, author
Long, Robert G., author
Robinson, G. Y., author
Geib, Kent M., author
Mahan, John E., author
American Institute of Physics, publisher
Journal Title
Journal ISSN
Volume Title
Abstract
Epitaxial thin films of the semiconducting transition metal silicide, beta-FeSi2, were grown on (001) silicon wafers. The observed matching face relationship is FeSi2 (100)/Si(001), with the azimuthal orientation being FeSi2 [010]
Si〈110〉. This heteroepitaxial relationship has acommon unit mesh of 59 Å2 area, with a mismatch of 2.1%. There is a strong tendency toward island formation within this heteroepitaxial system.
Si〈110〉. This heteroepitaxial relationship has acommon unit mesh of 59 Å2 area, with a mismatch of 2.1%. There is a strong tendency toward island formation within this heteroepitaxial system.