Epitaxial films of semiconducting FeSi2 on (001) silicon

Nathan, Menachem, author; Nicolet, Marc-A., author; Bai, Gang, author; Xinghua, Yan, author; Long, Robert G., author; Robinson, G. Y., author; Geib, Kent M., author; Mahan, John E., author; American Institute of Physics, publisher

Epitaxial films of semiconducting FeSi2 on (001) silicon

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ECEjem00001.pdf (440.84 KB)

Date

1990

Authors

Nathan, Menachem, author

Nicolet, Marc-A., author

Bai, Gang, author

Xinghua, Yan, author

Long, Robert G., author

Robinson, G. Y., author

Geib, Kent M., author

Mahan, John E., author

American Institute of Physics, publisher

Abstract

Epitaxial thin films of the semiconducting transition metal silicide, beta-FeSi2, were grown on (001) silicon wafers. The observed matching face relationship is FeSi2 (100)/Si(001), with the azimuthal orientation being FeSi2 [010]
Si〈110〉. This heteroepitaxial relationship has acommon unit mesh of 59 Å2 area, with a mismatch of 2.1%. There is a strong tendency toward island formation within this heteroepitaxial system.

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http://hdl.handle.net/10217/67924

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Epitaxial films of semiconducting FeSi2 on (001) silicon

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