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Epitaxial films of semiconducting FeSi2 on (001) silicon

Date

1990

Authors

Nathan, Menachem, author
Nicolet, Marc-A., author
Bai, Gang, author
Xinghua, Yan, author
Long, Robert G., author
Robinson, G. Y., author
Geib, Kent M., author
Mahan, John E., author
American Institute of Physics, publisher

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Abstract

Epitaxial thin films of the semiconducting transition metal silicide, beta-FeSi2, were grown on (001) silicon wafers. The observed matching face relationship is FeSi2 (100)/Si(001), with the azimuthal orientation being FeSi2 [010]
Si〈110〉. This heteroepitaxial relationship has acommon unit mesh of 59 Å2 area, with a mismatch of 2.1%. There is a strong tendency toward island formation within this heteroepitaxial system.

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