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Electrical and optical characteristics of AlAsSb/GaAsSb distributed Bragg reflectors for surface emitting lasers

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dc.contributor.authorChu, S. N. G., author
dc.contributor.authorLear, Kevin L., author
dc.contributor.authorKlem, J. F., author
dc.contributor.authorHafich, M. J., author
dc.contributor.authorBlum, O., author
dc.contributor.authorAmerican Institute of Physics, publisher
dc.date.accessioned2007-01-03T04:41:14Z
dc.date.available2007-01-03T04:41:14Z
dc.date.issued1995
dc.description.abstractWe demonstrate an undoped 20 1/2 pair AlAsSb/GaAsSb distributed Bragg reflector (DBR) grown lattice matched to an InP substrate by molecular beam epitaxy. Reflectivity measurements indicate a stop band centered at 1.78 µm with a maximum reflectivity exceeding 99%. We also measure current-voltage characteristics in a similar 10 1/2 period p-type DBR and find that a current density of 1 kA/cm2 produces a 2.5 V drop. Hole mobilities and doping concentrations in AlAsSb and GaAsSb are also reported.
dc.description.sponsorshipThis work was supported by the U.S. Department of Energy under Contract No. DE-C04-76-DP00789.
dc.format.mediumborn digital
dc.format.mediumarticles
dc.identifier.bibliographicCitationBlum, O., et al., Electrical and Optical Characteristics of AlAsSb/GaAsSb Distributed Bragg Reflectors for Surface Emitting Lasers, Applied Physics Letters 67, no. 22 (27 November 1995): 3233-3235.
dc.identifier.urihttp://hdl.handle.net/10217/814
dc.languageEnglish
dc.language.isoeng
dc.publisherColorado State University. Libraries
dc.relation.ispartofFaculty Publications
dc.rights©1995 American Institute of Physics.
dc.rightsCopyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright.
dc.subjectaluminium arsenides
dc.subjectaluminium compounds
dc.subjectantimonides
dc.subjectBragg reflection
dc.subjectcarrier mobility
dc.subjectelectrical properties
dc.subjectgallium antimonides
dc.subjectgallium arsenides
dc.subjectmirrors
dc.subjectmolecular beam epitaxy
dc.subjectreflectivity
dc.subjectsemiconductor lasers
dc.subjectsuperlattices
dc.titleElectrical and optical characteristics of AlAsSb/GaAsSb distributed Bragg reflectors for surface emitting lasers
dc.typeText

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