Electrical and optical characteristics of AlAsSb/GaAsSb distributed Bragg reflectors for surface emitting lasers
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Chu, S. N. G., author
Lear, Kevin L., author
Klem, J. F., author
Hafich, M. J., author
Blum, O., author
American Institute of Physics, publisher
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Abstract
We demonstrate an undoped 20 1/2 pair AlAsSb/GaAsSb distributed Bragg reflector (DBR) grown lattice matched to an InP substrate by molecular beam epitaxy. Reflectivity measurements indicate a stop band centered at 1.78 µm with a maximum reflectivity exceeding 99%. We also measure current-voltage characteristics in a similar 10 1/2 period p-type DBR and find that a current density of 1 kA/cm2 produces a 2.5 V drop. Hole mobilities and doping concentrations in AlAsSb and GaAsSb are also reported.
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Subject
aluminium arsenides
aluminium compounds
antimonides
Bragg reflection
carrier mobility
electrical properties
gallium antimonides
gallium arsenides
mirrors
molecular beam epitaxy