Saturation intensity and time response of InGaAs-InGaP MQW optical modulators
| dc.contributor.author | Robinson, G. Y., author | |
| dc.contributor.author | Vogt, T. J., author | |
| dc.contributor.author | Lile, D. L., author | |
| dc.contributor.author | Kim, J.-W., author | |
| dc.contributor.author | Rocca, Jorge J., author | |
| dc.contributor.author | Chilla, J. L. A., author | |
| dc.contributor.author | Watson, M. E., author | |
| dc.contributor.author | IEEE, publisher | |
| dc.date.accessioned | 2007-01-03T08:10:07Z | |
| dc.date.available | 2007-01-03T08:10:07Z | |
| dc.date.issued | 1995 | |
| dc.description.abstract | We report modulation saturation and time response measurements on InGaAs-InGaP MQW modulators. The measurements yield a saturation intensity of (3.7 ± 0.1) kW/cm2 for a 0-10 V swing and switching times between 10 and 90 ns, depending on the bias voltage and incident light intensity. The observed dependence indicates that field screening due to carrier build-up is the dominant physical mechanism determining both the speed and the saturation intensity. This conclusion is supported by results of theoretical calculations. | |
| dc.format.medium | born digital | |
| dc.format.medium | articles | |
| dc.identifier.bibliographicCitation | Watson, M. E., et al., Saturation Intensity and Time Response of InGaAs-InGaP MQW Optical Modulators, IEEE Journal of Quantum Electronics 31, no. 2 (February 1995): 254-260. | |
| dc.identifier.uri | http://hdl.handle.net/10217/67603 | |
| dc.language | English | |
| dc.language.iso | eng | |
| dc.publisher | Colorado State University. Libraries | |
| dc.relation.ispartof | Faculty Publications | |
| dc.rights | ©IEEE 1995. | |
| dc.rights | Copyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright. | |
| dc.title | Saturation intensity and time response of InGaAs-InGaP MQW optical modulators | |
| dc.type | Text |
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