Saturation intensity and time response of InGaAs-InGaP MQW optical modulators

Robinson, G. Y., author; Vogt, T. J., author; Lile, D. L., author; Kim, J.-W., author; Rocca, Jorge J., author; Chilla, J. L. A., author; Watson, M. E., author; IEEE, publisher

Saturation intensity and time response of InGaAs-InGaP MQW optical modulators

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ECEjjr00107.pdf (744.22 KB)

Date

1995

Authors

Robinson, G. Y., author

Vogt, T. J., author

Lile, D. L., author

Kim, J.-W., author

Rocca, Jorge J., author

Chilla, J. L. A., author

Watson, M. E., author

IEEE, publisher

Abstract

We report modulation saturation and time response measurements on InGaAs-InGaP MQW modulators. The measurements yield a saturation intensity of (3.7 ± 0.1) kW/cm2 for a 0-10 V swing and switching times between 10 and 90 ns, depending on the bias voltage and incident light intensity. The observed dependence indicates that field screening due to carrier build-up is the dominant physical mechanism determining both the speed and the saturation intensity. This conclusion is supported by results of theoretical calculations.

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http://hdl.handle.net/10217/67603

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Saturation intensity and time response of InGaAs-InGaP MQW optical modulators

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