Anisotropic plasma-chemical etching by an electron-beam-generated plasma
| dc.contributor.author | Rocca, Jorge J., author | |
| dc.contributor.author | Verhey, T. R., author | |
| dc.contributor.author | Boyer, P. K., author | |
| dc.contributor.author | American Institute of Physics, publisher | |
| dc.date.accessioned | 2007-01-03T08:10:13Z | |
| dc.date.available | 2007-01-03T08:10:13Z | |
| dc.date.issued | 1988 | |
| dc.description.abstract | Anisotropic etching of SiO2 has been achieved with a plasma generated by a broad-area low-energy (150-300 eV) electron beam in a He + CF4 atmosphere. Etch rates of up to 330 Å/min for SiO2 and 220 Å/min for Si were obtained. Etching occurred with good uniformity over the entire area exposed to the electron-beam-generated plasma. The fluxes of energetic charged particles to the sample surface are discussed in relation to their possible contribution to the etching process. | |
| dc.format.medium | born digital | |
| dc.format.medium | articles | |
| dc.identifier.bibliographicCitation | Verhey, T. R., J. J. Rocca, and P. K. Boyer, Anisotropic Plasma-Chemical Etching by an Electron-Beam-Generated Plasma, Journal of Applied Physics 63, no. 7 (1 April 1988): 2463-2466. | |
| dc.identifier.uri | http://hdl.handle.net/10217/67639 | |
| dc.language | English | |
| dc.language.iso | eng | |
| dc.publisher | Colorado State University. Libraries | |
| dc.relation.ispartof | Faculty Publications | |
| dc.rights | ©1988 American Institute of Physics. | |
| dc.rights | Copyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright. | |
| dc.title | Anisotropic plasma-chemical etching by an electron-beam-generated plasma | |
| dc.type | Text |
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