Anisotropic plasma-chemical etching by an electron-beam-generated plasma
Date
1988
Authors
Rocca, Jorge J., author
Verhey, T. R., author
Boyer, P. K., author
American Institute of Physics, publisher
Journal Title
Journal ISSN
Volume Title
Abstract
Anisotropic etching of SiO2 has been achieved with a plasma generated by a broad-area low-energy (150-300 eV) electron beam in a He + CF4 atmosphere. Etch rates of up to 330 Å/min for SiO2 and 220 Å/min for Si were obtained. Etching occurred with good uniformity over the entire area exposed to the electron-beam-generated plasma. The fluxes of energetic charged particles to the sample surface are discussed in relation to their possible contribution to the etching process.