Repository logo
 

Anisotropic plasma-chemical etching by an electron-beam-generated plasma

Date

1988

Authors

Rocca, Jorge J., author
Verhey, T. R., author
Boyer, P. K., author
American Institute of Physics, publisher

Journal Title

Journal ISSN

Volume Title

Abstract

Anisotropic etching of SiO2 has been achieved with a plasma generated by a broad-area low-energy (150-300 eV) electron beam in a He + CF4 atmosphere. Etch rates of up to 330 Å/min for SiO2 and 220 Å/min for Si were obtained. Etching occurred with good uniformity over the entire area exposed to the electron-beam-generated plasma. The fluxes of energetic charged particles to the sample surface are discussed in relation to their possible contribution to the etching process.

Description

Rights Access

Subject

Citation

Associated Publications