A review of microelectronic film deposition using direct and remote electron-beam-generated plasmas
dc.contributor.author | Collins, George J., author | |
dc.contributor.author | Lin, Chongjie, author | |
dc.contributor.author | Zarnani, Hamid, author | |
dc.contributor.author | Sheng, Tien Yu, author | |
dc.contributor.author | Luo, Zongnan, author | |
dc.contributor.author | Zu, Zengqi, author | |
dc.contributor.author | IEEE, publisher | |
dc.date.accessioned | 2007-01-03T07:27:54Z | |
dc.date.available | 2007-01-03T07:27:54Z | |
dc.date.issued | 1990 | |
dc.description.abstract | Soft-vacuum-generated electron beams employed to create a large area plasma for assisting chemical vapor deposition (CVD) of thin films are reviewed. The electron beam plasma is used both directly, where electron impact dissociation of feedstock gases plays a dominant role, and indirectly in a downstream afterglow, where electron impact dissociation of feedstock reactants plays no role. Rather, photodissociation and metastable atom-molecule reactions dominate in the downstream afterglow. To better understand electron-beam-created plasmas using a slotted ring cathode, the transmitted beam spatial intensity profiles have been quantified from initial generation at a slotted line-shaped cold cathode through acceleration in the cathode sheath and propagation in the ambient gas. To better understand the role of photodissociation in downstream plasma-assisted CVD, the VUV output spectrum and VUV generation efficiency from electron-beam-excited plasmas have been measured. The properties of films deposited via both direct electron-beam-generated plasma-assisted CVD and downstream afterglow CVD are reviewed and compared to conventional plasma assisted CVD films. | |
dc.description.sponsorship | This work was supported in part by the Naval Research Laboratory, the National Science Foundation, Emerging Technology Division NSF Grant EET8806851, Solid State and Microstructures, NSF Grant ECS-8906311, and the ORC Manufacturing Company, Ltd. | |
dc.format.medium | born digital | |
dc.format.medium | articles | |
dc.identifier.bibliographicCitation | Yu, Zengqi, et al., A Review of Microelectronic Film Deposition Using Direct and Remote Electron-Beam-Generated Plasmas, IEEE Transactions on Plasma Science 18, no. 5 (October 1990): 753-765. | |
dc.identifier.uri | http://hdl.handle.net/10217/629 | |
dc.language | English | |
dc.language.iso | eng | |
dc.publisher | Colorado State University. Libraries | |
dc.relation.ispartof | Faculty Publications | |
dc.rights | ©1990 IEEE. | |
dc.rights | Copyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright. | |
dc.subject | electron beam effects | |
dc.subject | plasma CVD | |
dc.subject | plasma CVD coatings | |
dc.subject | reviews | |
dc.subject | plasma-beam interactions | |
dc.title | A review of microelectronic film deposition using direct and remote electron-beam-generated plasmas | |
dc.type | Text |
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