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Cavity characteristics of selectively oxidized vertical-cavity lasers

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dc.contributor.authorSchneider, Richard P., author
dc.contributor.authorLear, Kevin L., author
dc.contributor.authorChoquette, Kent D., author
dc.contributor.authorGeib, Kent M., author
dc.contributor.authorAmerican Institute of Physics, publisher
dc.date.accessioned2007-01-03T04:41:14Z
dc.date.available2007-01-03T04:41:14Z
dc.date.issued1995
dc.description.abstractWe show that a buried oxide layer forming a current aperture in an all epitaxial vertical-cavity surface emitting laser has a profound influence on the optical and electrical characteristics of the device. The lateral index variation formed around the oxide current aperture leads to a shift in the cavity resonance wavelength. The resonance wavelength under the oxide layer can thus be manipulated, independent of the as-grown cavity resonance, by adjusting the oxide layer thickness and its placement relative to the active region. In addition, the electrical confinement afforded by the oxide layer enables record low threshold current densities and threshold voltages in these lasers.
dc.description.sponsorshipThis work is supported by the United States Department of Energy under Contract No. DE-AC04-94AL85000.
dc.format.mediumborn digital
dc.format.mediumarticles
dc.identifier.bibliographicCitationChoquette, Kent D., et al., Cavity Characteristics of Selectively Oxidized Vertical-Cavity Lasers, Applied Physics Letters 66, no. 25 (19 June 1995): 3413-3415.
dc.identifier.urihttp://hdl.handle.net/10217/811
dc.languageEnglish
dc.language.isoeng
dc.publisherColorado State University. Libraries
dc.relation.ispartofFaculty Publications
dc.rights©1995 American Institute of Physics.
dc.rightsCopyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright.
dc.subjectlaser cavities
dc.subjectcurrent density
dc.subjectlaser-mirrors
dc.subjectperformance
dc.subjectaluminium arsenides
dc.subjectgallium arsenides
dc.subjectmicroeletronics
dc.subjectBragg reflection
dc.subjectsemiconductor lasers
dc.subjectburied layers
dc.subjectquantum wells
dc.subjectthreshold voltage
dc.subjectexpitaxial layers
dc.titleCavity characteristics of selectively oxidized vertical-cavity lasers
dc.typeText

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