Cavity characteristics of selectively oxidized vertical-cavity lasers
Date
1995
Authors
Schneider, Richard P., author
Lear, Kevin L., author
Choquette, Kent D., author
Geib, Kent M., author
American Institute of Physics, publisher
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Abstract
We show that a buried oxide layer forming a current aperture in an all epitaxial vertical-cavity surface emitting laser has a profound influence on the optical and electrical characteristics of the device. The lateral index variation formed around the oxide current aperture leads to a shift in the cavity resonance wavelength. The resonance wavelength under the oxide layer can thus be manipulated, independent of the as-grown cavity resonance, by adjusting the oxide layer thickness and its placement relative to the active region. In addition, the electrical confinement afforded by the oxide layer enables record low threshold current densities and threshold voltages in these lasers.
Description
Rights Access
Subject
laser cavities
current density
laser-mirrors
performance
aluminium arsenides
gallium arsenides
microeletronics
Bragg reflection
semiconductor lasers
buried layers