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Picosecond absorption dynamics of photoexcited InGaP epitaxial films

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dc.contributor.authorThiagarajan, P., author
dc.contributor.authorSchmerge, J. F., author
dc.contributor.authorMenoni, Carmen S., author
dc.contributor.authorMarconi, Mario Carlos, author
dc.contributor.authorMartinez, Oscar Eduardo, author
dc.contributor.authorRocca, Jorge J., author
dc.contributor.authorHafich, M. J., author
dc.contributor.authorLee, H. Y., author
dc.contributor.authorRobinson, G. Y., author
dc.contributor.authorAmerican Institute of Physics, publisher
dc.date.accessioned2015-07-28T16:06:29Z
dc.date.available2015-07-28T16:06:29Z
dc.date.issued1991
dc.description.abstractThe absorption recovery of a photoexcited InGaP epitaxial film 0.4 µm thick was investigated using the pump-probe laser technique and found to have a time constant of 55 ps at room temperature. Measurements done in the temperature range of 300-50 K show the decay of the photoexcited carrier distribution to be dominated by ambipolar diffusion and surface recombination. The measured absorption recovery time constant corresponds to an ambipolar diffusion coefficient D > 2.8 cm2/s and a surface recombination velocity of S > 4 × 105 cm/s at room temperature.
dc.description.sponsorshipThis work was supported by the National Science Foundation grant (USA/Argentina) INT 8802563, the Air Force Office of Scientific Research (contract 89-0513), and the Center for Optoelectronic Computing Systems, sponsored by the National Science Foundation/Engineering Research Center grant ECD 9015128 and by the Colorado Advanced Technology Institute, an agency of the State of Colorado. C. S. Menoni acknowledges the support of the National Science Foundation grant ECS 9008899 and the CSU Faculty Research Grant.
dc.format.mediumborn digital
dc.format.mediumarticles
dc.identifier.bibliographicCitationThiagarajan, P., et al., Picosecond Absorption Dynamics of Photoexcited InGaP Epitaxial Films, Applied Physics Letters 59, no. 1 (1 July 1991): 90-92.
dc.identifier.urihttp://hdl.handle.net/10217/2120
dc.languageEnglish
dc.language.isoeng
dc.publisherColorado State University. Libraries
dc.relation.ispartofFaculty Publications
dc.rights©1991 American Institute of Physics.
dc.rightsCopyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright.
dc.subjectindium phosphides
dc.subjectgallium phosphides
dc.subjectphotoconductivity
dc.subjectoptoelectronic devices
dc.subjectcarrier density
dc.subjectambipolar diffusion
dc.subjectatom transport
dc.subjectrecombination
dc.subjecttemperature dependence
dc.subjectps range
dc.titlePicosecond absorption dynamics of photoexcited InGaP epitaxial films
dc.typeText

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