Picosecond absorption dynamics of photoexcited InGaP epitaxial films

Thiagarajan, P., author; Schmerge, J. F., author; Menoni, Carmen S., author; Marconi, Mario Carlos, author; Martinez, Oscar Eduardo, author; Rocca, Jorge J., author; Hafich, M. J., author; Lee, H. Y., author; Robinson, G. Y., author; American Institute of Physics, publisher

Picosecond absorption dynamics of photoexcited InGaP epitaxial films

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ECEmcm00035.pdf (451.19 KB)

Date

1991

Authors

Thiagarajan, P., author

Schmerge, J. F., author

Menoni, Carmen S., author

Marconi, Mario Carlos, author

Martinez, Oscar Eduardo, author

Rocca, Jorge J., author

Hafich, M. J., author

Lee, H. Y., author

Robinson, G. Y., author

American Institute of Physics, publisher

Abstract

The absorption recovery of a photoexcited InGaP epitaxial film 0.4 µm thick was investigated using the pump-probe laser technique and found to have a time constant of 55 ps at room temperature. Measurements done in the temperature range of 300-50 K show the decay of the photoexcited carrier distribution to be dominated by ambipolar diffusion and surface recombination. The measured absorption recovery time constant corresponds to an ambipolar diffusion coefficient D > 2.8 cm2/s and a surface recombination velocity of S > 4 × 105 cm/s at room temperature.

Subject

indium phosphides

gallium phosphides

photoconductivity

optoelectronic devices

carrier density

ambipolar diffusion

atom transport

recombination

temperature dependence

ps range

URI

http://hdl.handle.net/10217/2120

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Picosecond absorption dynamics of photoexcited InGaP epitaxial films

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