Comprehensive numerical modeling of vertical-cavity surface emitting lasers
dc.contributor.author | Corzine, Scott W., author | |
dc.contributor.author | Scott, J. W., author | |
dc.contributor.author | Choquette, Kent D., author | |
dc.contributor.author | Warren, Mial E., author | |
dc.contributor.author | Lear, Kevin L., author | |
dc.contributor.author | Hadley, G. Ronald, author | |
dc.contributor.author | IEEE, publisher | |
dc.date.accessioned | 2007-01-03T04:42:39Z | |
dc.date.available | 2007-01-03T04:42:39Z | |
dc.date.issued | 1996 | |
dc.description.abstract | We present a comprehensive numerical model for vertical-cavity surface-emitting lasers that includes all major processes affecting cw operation of axisymmetric devices. In particular, our model includes a description of the 2-D transport of electrons and holes through the cladding layers to the quantum well(s), diffusion and recombination of these carriers within the wells, the 2-D transport of heat throughout the device, and a multilateral-mode effective index optical model. The optical gain acquired by photons traversing the quantum wells is computed including the effects of strained band structure and quantum confinement. We employ our model to predict the behavior of higher-order lateral modes in proton-implanted devices and to provide an understanding of index-guiding in devices fabricated using selective oxidation. | |
dc.description.sponsorship | This work was performed in part at Sandia National Laboratories and supported by the U.S. Department of Energy under Contract DE-AC04-94AL85000. | |
dc.format.medium | born digital | |
dc.format.medium | articles | |
dc.identifier.bibliographicCitation | Hadley, G. Ronald, et al., Comprehensive Numerical Modeling of Vertical-Cavity Surface-Emitting Lasers, IEEE Journal of Quantum Electronics 32, no. 4 (April 1996): 607-616. | |
dc.identifier.uri | http://hdl.handle.net/10217/830 | |
dc.language | English | |
dc.language.iso | eng | |
dc.publisher | Colorado State University. Libraries | |
dc.relation.ispartof | Faculty Publications | |
dc.rights | ©1996 IEEE. | |
dc.rights | Copyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright. | |
dc.subject | band structure | |
dc.subject | carrier mobility | |
dc.subject | ion implantation | |
dc.subject | laser cavity resonators | |
dc.subject | laser modes | |
dc.subject | quantum well lasers | |
dc.subject | refractive index | |
dc.subject | semiconductor device models | |
dc.subject | surface emitting lasers | |
dc.title | Comprehensive numerical modeling of vertical-cavity surface emitting lasers | |
dc.type | Text |
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