Vertical cavity lasers on p-doped substrates
| dc.contributor.author | OsiĆski, M., author | |
| dc.contributor.author | Furioli, J., author | |
| dc.contributor.author | Hammons, B. E., author | |
| dc.contributor.author | Banas, J. J., author | |
| dc.contributor.author | Hou, H. Q., author | |
| dc.contributor.author | Lear, Kevin L., author | |
| dc.contributor.author | IEE, publisher | |
| dc.date.accessioned | 2007-01-03T08:10:21Z | |
| dc.date.available | 2007-01-03T08:10:21Z | |
| dc.date.issued | 1997 | |
| dc.description.abstract | Vertical cavity surface emitting laser (VCSEL) diodes fabricated with inverted polarity, i.e. p-type bottom mirror and n type top mirror, are reported with lower resistance and diode voltage and comparable output characteristics relative to similar conventional, non-inverted structures. | |
| dc.format.medium | born digital | |
| dc.format.medium | articles | |
| dc.identifier.bibliographicCitation | Lear, K. L., et al., Vertical Cavity Lasers on P-Doped Substrates, Electronics Letters 33, no. 9 (24 April 1997): 783-784. | |
| dc.identifier.uri | http://hdl.handle.net/10217/67866 | |
| dc.language | English | |
| dc.language.iso | eng | |
| dc.publisher | Colorado State University. Libraries | |
| dc.relation.ispartof | Faculty Publications | |
| dc.rights | ©1997 IEE. | |
| dc.rights | Copyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright. | |
| dc.subject | semiconductor junction lasers | |
| dc.subject | vertical cavity surface emitting lasers | |
| dc.title | Vertical cavity lasers on p-doped substrates | |
| dc.type | Text |
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