Vertical cavity lasers on p-doped substrates

Osiński, M., author; Furioli, J., author; Hammons, B. E., author; Banas, J. J., author; Hou, H. Q., author; Lear, Kevin L., author; IEE, publisher

Vertical cavity lasers on p-doped substrates

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ECEkll00018.pdf (232.77 KB)

Date

1997

Authors

Osiński, M., author

Furioli, J., author

Hammons, B. E., author

Banas, J. J., author

Hou, H. Q., author

Lear, Kevin L., author

IEE, publisher

Abstract

Vertical cavity surface emitting laser (VCSEL) diodes fabricated with inverted polarity, i.e. p-type bottom mirror and n type top mirror, are reported with lower resistance and diode voltage and comparable output characteristics relative to similar conventional, non-inverted structures.

Subject

semiconductor junction lasers

vertical cavity surface emitting lasers

URI

http://hdl.handle.net/10217/67866

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Vertical cavity lasers on p-doped substrates

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