Vertical cavity lasers on p-doped substrates

Date
1997
Authors
Osiński, M., author
Furioli, J., author
Hammons, B. E., author
Banas, J. J., author
Hou, H. Q., author
Lear, Kevin L., author
IEE, publisher
Journal Title
Journal ISSN
Volume Title
Abstract
Vertical cavity surface emitting laser (VCSEL) diodes fabricated with inverted polarity, i.e. p-type bottom mirror and n type top mirror, are reported with lower resistance and diode voltage and comparable output characteristics relative to similar conventional, non-inverted structures.
Description
Rights Access
Subject
semiconductor junction lasers
vertical cavity surface emitting lasers
Citation
Associated Publications