Vertical cavity lasers on p-doped substrates
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Date
Authors
Osiński, M., author
Furioli, J., author
Hammons, B. E., author
Banas, J. J., author
Hou, H. Q., author
Lear, Kevin L., author
IEE, publisher
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Abstract
Vertical cavity surface emitting laser (VCSEL) diodes fabricated with inverted polarity, i.e. p-type bottom mirror and n type top mirror, are reported with lower resistance and diode voltage and comparable output characteristics relative to similar conventional, non-inverted structures.
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Subject
semiconductor junction lasers
vertical cavity surface emitting lasers