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Temperature-dependent characteristics and single-mode performance of AlGaInP-based 670-690-nm vertical-cavity surface-emitting lasers

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dc.contributor.authorChoquette, Kent D., author
dc.contributor.authorSchneider, Richard P., author
dc.contributor.authorCrawford, Mary Hagerott, author
dc.contributor.authorLear, Kevin L., author
dc.contributor.authorIEEE, publisher
dc.date.accessioned2007-01-03T04:43:04Z
dc.date.available2007-01-03T04:43:04Z
dc.date.issued1995
dc.description.abstractWe report on temperature dependent characteristics and single mode performance of one-wave cavity, planar implanted, AlGaInP-based vertical-cavity surface emitting lasers. By optimizing the overlap between the gain peak and the cavity mode of the structure, we demonstrate record device performance, including 8.2 mW maximum output power and 11% power conversion efficiency for multimode operation and 1.9 mW and 9.6% power conversion efficiency for single mode operation at 687 nm. Improved performance at elevated temperatures is also achieved, with 1.5 mW output power demonstrated at 50 °C from a 15-μm-diameter device.
dc.description.sponsorshipThis letter was supported by the US Department of Energy under contract no. DE-AC04-94AL85000.
dc.format.mediumborn digital
dc.format.mediumarticles
dc.identifier.bibliographicCitationCrawford, M. Hagerott, et al., Temperature-Dependent Characteristics and Single-Mode Performance of AIGaInP-Based 670-690-nm Vertical-Cavity Surface-Emitting Lasers, IEEE Photonics Technology Letters 7, no. 7 (July 1995): 724-726.
dc.identifier.urihttp://hdl.handle.net/10217/837
dc.languageEnglish
dc.language.isoeng
dc.publisherColorado State University. Libraries
dc.relation.ispartofFaculty Publications
dc.rights©1995 IEEE.
dc.rightsCopyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright.
dc.subjectgallium compounds
dc.subjectaluminium compounds
dc.subjectIII-V semiconductors
dc.subjectindium compounds
dc.subjectlaser cavity resonators
dc.subjectlaser modes
dc.subjectsemiconductor lasers
dc.subjectsurface emitting lasers
dc.titleTemperature-dependent characteristics and single-mode performance of AlGaInP-based 670-690-nm vertical-cavity surface-emitting lasers
dc.typeText

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