Temperature-dependent characteristics and single-mode performance of AlGaInP-based 670-690-nm vertical-cavity surface-emitting lasers

Choquette, Kent D., author; Schneider, Richard P., author; Crawford, Mary Hagerott, author; Lear, Kevin L., author; IEEE, publisher

Temperature-dependent characteristics and single-mode performance of AlGaInP-based 670-690-nm vertical-cavity surface-emitting lasers

Files

ECEkll00037.pdf (269.35 KB)

Date

1995

Authors

Choquette, Kent D., author

Schneider, Richard P., author

Crawford, Mary Hagerott, author

Lear, Kevin L., author

IEEE, publisher

Abstract

We report on temperature dependent characteristics and single mode performance of one-wave cavity, planar implanted, AlGaInP-based vertical-cavity surface emitting lasers. By optimizing the overlap between the gain peak and the cavity mode of the structure, we demonstrate record device performance, including 8.2 mW maximum output power and 11% power conversion efficiency for multimode operation and 1.9 mW and 9.6% power conversion efficiency for single mode operation at 687 nm. Improved performance at elevated temperatures is also achieved, with 1.5 mW output power demonstrated at 50 °C from a 15-μm-diameter device.

Subject

gallium compounds

aluminium compounds

III-V semiconductors

indium compounds

laser cavity resonators

laser modes

semiconductor lasers

surface emitting lasers

URI

http://hdl.handle.net/10217/837

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