Transient grating measurements of ambipolar diffusion and carrier recombination in InGaP/InAlP multiple quantum wells and InGaP bulk
dc.contributor.author | Robinson, G. Y., author | |
dc.contributor.author | Hafich, M. J., author | |
dc.contributor.author | Chilla, J. L. A., author | |
dc.contributor.author | Rocca, Jorge J., author | |
dc.contributor.author | Menoni, C. S., author | |
dc.contributor.author | Martinez, O. E., author | |
dc.contributor.author | Prasad, M., author | |
dc.contributor.author | [TMS], publisher | |
dc.date.accessioned | 2007-01-03T08:10:07Z | |
dc.date.available | 2007-01-03T08:10:07Z | |
dc.date.issued | 1994 | |
dc.description.abstract | The ambipolar diffusion coefficient and carrier recombination lifetime in InGaP/InAlP multiple quantum wells and InGaP epitaxial layers grown by gas source molecular beam epitaxy have been determined by measuring the diffraction efficiency decay of transient gratings induced by picosecond laser pulses. The multiple quantum well room temperature ambipolar diffusion coefficient of carrier transport parallel to the growth plane was measured to be approximately half that of the bulk material. | |
dc.format.medium | born digital | |
dc.format.medium | articles | |
dc.identifier.bibliographicCitation | Prasad, M., et al., Transient Grating Measurements of Ambipolar Diffusion and Carrier Recombination in InGaP/InAlP Multiple Quantum Wells and InGaP Bulk, Journal of Electronic Materials 23, no. 3 (1994): 359-362. | |
dc.identifier.uri | http://hdl.handle.net/10217/67604 | |
dc.language | English | |
dc.language.iso | eng | |
dc.publisher | Colorado State University. Libraries | |
dc.relation.ispartof | Faculty Publications | |
dc.rights | ©1994 TMS. | |
dc.rights | Copyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright. | |
dc.subject | InGaP/InAlP multiple quantum well | |
dc.subject | ambipolar diffusion | |
dc.subject | carrier recombination | |
dc.title | Transient grating measurements of ambipolar diffusion and carrier recombination in InGaP/InAlP multiple quantum wells and InGaP bulk | |
dc.type | Text |
Files
Original bundle
1 - 1 of 1
Loading...
- Name:
- ECEjjr00109.pdf
- Size:
- 371.17 KB
- Format:
- Adobe Portable Document Format
- Description: