Transient grating measurements of ambipolar diffusion and carrier recombination in InGaP/InAlP multiple quantum wells and InGaP bulk

Robinson, G. Y., author; Hafich, M. J., author; Chilla, J. L. A., author; Rocca, Jorge J., author; Menoni, C. S., author; Martinez, O. E., author; Prasad, M., author; [TMS], publisher

Transient grating measurements of ambipolar diffusion and carrier recombination in InGaP/InAlP multiple quantum wells and InGaP bulk

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ECEjjr00109.pdf (371.17 KB)

Date

1994

Authors

Robinson, G. Y., author

Hafich, M. J., author

Chilla, J. L. A., author

Rocca, Jorge J., author

Menoni, C. S., author

Martinez, O. E., author

Prasad, M., author

[TMS], publisher

Abstract

The ambipolar diffusion coefficient and carrier recombination lifetime in InGaP/InAlP multiple quantum wells and InGaP epitaxial layers grown by gas source molecular beam epitaxy have been determined by measuring the diffraction efficiency decay of transient gratings induced by picosecond laser pulses. The multiple quantum well room temperature ambipolar diffusion coefficient of carrier transport parallel to the growth plane was measured to be approximately half that of the bulk material.

Subject

InGaP/InAlP multiple quantum well

ambipolar diffusion

carrier recombination

URI

http://hdl.handle.net/10217/67604

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Transient grating measurements of ambipolar diffusion and carrier recombination in InGaP/InAlP multiple quantum wells and InGaP bulk

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