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Characterization of tellurium back contact layer for CdTe thin film devices

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dc.contributor.authorMoffett, Christina, author
dc.contributor.authorSampath, W. S., advisor
dc.contributor.authorSites, James, committee member
dc.contributor.authorPopat, Ketul, committee member
dc.date.accessioned2018-09-10T20:04:26Z
dc.date.available2018-09-10T20:04:26Z
dc.date.issued2018
dc.description.abstractCadmium Telluride (CdTe) thin film photovoltaic technology has shown favorable progress due to inexpensive and efficient processing techniques. However, efficiencies have yet to reach the overall projected CdTe device efficiency, with the back contact being a main source of CdTe performance limitations. Tellurium (Te) applied as a back contact has led to significant increases in fill factor and an overall progress in device efficiency. Devices deposited with Te show significant improvement in uniformity, even without intentional Cu doping, when compared to devices without Te. In current - density measurements, Te shows stability even at low temperatures, which is indicative of a low barrier developed at the CdTe/Te interface. X-ray and ultra-violet photoelectron spectroscopy were carried out to examine the valence band offset at the CdTe/Te back contact interface. The valence band offset was shown to be highly dependent on the Te thickness and was largely affected by oxidation and contamination at the surface. Capacitance measurements were carried out to study the effect Te has on the absorber depletion width. Data indicate a decreased depletion width with Te applied at the back of thin film CdTe devices, which agrees with increased device performance. Te thickness was varied in all studies to understand the effect of application thickness on device performance and material characteristics. With a thicker Te layer leading to overall improvement in device performance and favorable device characteristics.
dc.format.mediumborn digital
dc.format.mediummasters theses
dc.identifierMoffett_colostate_0053N_14898.pdf
dc.identifier.urihttps://hdl.handle.net/10217/191313
dc.languageEnglish
dc.language.isoeng
dc.publisherColorado State University. Libraries
dc.relation.ispartof2000-2019
dc.rightsCopyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright.
dc.subjectback contact interface
dc.subjectphotovoltaics
dc.subjectthin film
dc.subjectcadmium telluride
dc.subjectback contact
dc.subjecttellurium
dc.titleCharacterization of tellurium back contact layer for CdTe thin film devices
dc.typeText
dcterms.rights.dplaThis Item is protected by copyright and/or related rights (https://rightsstatements.org/vocab/InC/1.0/). You are free to use this Item in any way that is permitted by the copyright and related rights legislation that applies to your use. For other uses you need to obtain permission from the rights-holder(s).
thesis.degree.disciplineMechanical Engineering
thesis.degree.grantorColorado State University
thesis.degree.levelMasters
thesis.degree.nameMaster of Science (M.S.)

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