Low temperature epitaxial silicon film growth using high vacuum electron-cyclotron-resonance plasma deposition
We report on the growth technique and electrical properties of epitaxial Si films grown at low temperatures using an electron-cyclotron-resonance plasma deposition technique. We have used standard high vacuum apparatus to grow high quality films at 450-525 °C. A critical step in achieving high quality films is an in situ hydrogen plasma cleaning of the wafer before growth. We have systematically studied the influence of ion bombardment during growth by biasing the substrate, and find that the films are crystalline for substrate bias voltages less negative than about -15 V, but become polycrystalline ...
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Chumanov, George; Dalal, Vikram L.; DeBoer, Scott J.; Bartels, Randy