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dc.contributor.authorFigiel, J. J.
dc.contributor.authorKilcoyne, S. P.
dc.contributor.authorLear, Kevin L.
dc.contributor.authorChoquette, K. D.
dc.contributor.authorSchneider, R. P.
dc.contributor.authorCrawford, M. Hagerott
dc.date.accessioned2007-01-03T08:10:21Z
dc.date.available2007-01-03T08:10:21Z
dc.date.issued1995
dc.descriptionIncludes bibliographical references (pages 197-198).
dc.description.abstractRecord continuous-wave output power of 2.9mW and 10% peak wallplug efficiency have been achieved from planar gain guided AlGaInP-based vertical-cavity surface emitting lasers. These results represent nearly an order of magnitude improvement in performance over previous AlGaInP-based vertical-cavity lasers.
dc.format.mediumborn digital
dc.format.mediumarticles
dc.identifier.bibliographicCitationHagerott, M., et al., High Efficiency AlGaInP-Based 660-680nm Vertical-Cavity Surface Emitting Lasers, Electronics Letters 31, no. 3 (2 February 1995): 196-198.
dc.identifier.urihttp://hdl.handle.net/10217/67871
dc.languageEnglish
dc.publisherColorado State University. Libraries
dc.publisher.originalIEE
dc.relation.ispartofFaculty Publications - Department of Electrical and Computer Engineering
dc.rights©1995 IEE
dc.subjectvisible semiconductor lasers
dc.subjectvertical cavity surface emitting lasers
dc.titleHigh efficiency AlGaInP-based 660-680nm vertical-cavity surface emitting lasers
dc.typeText


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