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High efficiency AlGaInP-based 660-680nm vertical-cavity surface emitting lasers

dc.contributor.authorFigiel, J. J., author
dc.contributor.authorKilcoyne, S. P., author
dc.contributor.authorLear, Kevin L., author
dc.contributor.authorChoquette, K. D., author
dc.contributor.authorSchneider, R. P., author
dc.contributor.authorCrawford, M. Hagerott, author
dc.contributor.authorIEE, publisher
dc.date.accessioned2007-01-03T08:10:21Z
dc.date.available2007-01-03T08:10:21Z
dc.date.issued1995
dc.description.abstractRecord continuous-wave output power of 2.9mW and 10% peak wallplug efficiency have been achieved from planar gain guided AlGaInP-based vertical-cavity surface emitting lasers. These results represent nearly an order of magnitude improvement in performance over previous AlGaInP-based vertical-cavity lasers.
dc.format.mediumborn digital
dc.format.mediumarticles
dc.identifier.bibliographicCitationHagerott, M., et al., High Efficiency AlGaInP-Based 660-680nm Vertical-Cavity Surface Emitting Lasers, Electronics Letters 31, no. 3 (2 February 1995): 196-198.
dc.identifier.urihttp://hdl.handle.net/10217/67871
dc.languageEnglish
dc.language.isoeng
dc.publisherColorado State University. Libraries
dc.relation.ispartofFaculty Publications
dc.rights©1995 IEE.
dc.rightsCopyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright.
dc.subjectvisible semiconductor lasers
dc.subjectvertical cavity surface emitting lasers
dc.titleHigh efficiency AlGaInP-based 660-680nm vertical-cavity surface emitting lasers
dc.typeText

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