Broad-area electron-beam-assisted etching of silicon in sulfur hexafluoride
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Silicon etching rates up to 250 Å/min have been observed in an electron-beam-generated He plus SF6 plasma. The etch rate was found to increase linearly with electron beam current density and to be practically independent of the electron acceleration voltage in the range investigated (170-260 V). Profiles of the resulting features show that etching is anisotropic with a vertical-to-horizontal ratio of 2.5 to 3.