Broad-area electron-beam-assisted etching of silicon in sulfur hexafluoride
| dc.contributor.author | Martinez, R. Ortega, author | |
| dc.contributor.author | Boyer, P. K., author | |
| dc.contributor.author | Verhey, T. R., author | |
| dc.contributor.author | Rocca, Jorge J., author | |
| dc.contributor.author | American Vacuum Society, publisher | |
| dc.date.accessioned | 2007-01-03T08:10:12Z | |
| dc.date.available | 2007-01-03T08:10:12Z | |
| dc.date.issued | 1988 | |
| dc.description.abstract | Silicon etching rates up to 250 Å/min have been observed in an electron-beam-generated He plus SF6 plasma. The etch rate was found to increase linearly with electron beam current density and to be practically independent of the electron acceleration voltage in the range investigated (170-260 V). Profiles of the resulting features show that etching is anisotropic with a vertical-to-horizontal ratio of 2.5 to 3. | |
| dc.format.medium | born digital | |
| dc.format.medium | articles | |
| dc.identifier.bibliographicCitation | Martinez, R. Ortega, et al., Broad-Area Electron-Beam-Assisted Etching of Silicon in Sulfur Hexafluoride, Journal of Vacuum Science & Technology. B, Microelectronics Processing and Phenomena 6, no. 5 (September/October 1988): 1581-1583. | |
| dc.identifier.uri | http://hdl.handle.net/10217/67635 | |
| dc.language | English | |
| dc.language.iso | eng | |
| dc.publisher | Colorado State University. Libraries | |
| dc.relation.ispartof | Faculty Publications | |
| dc.rights | ©1988 American Vacuum Society. | |
| dc.rights | Copyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright. | |
| dc.title | Broad-area electron-beam-assisted etching of silicon in sulfur hexafluoride | |
| dc.type | Text |
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