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dc.contributor.authorVinogradov, A. V.
dc.contributor.authorUspenskii, Yu. A.
dc.contributor.authorForsythe, M.
dc.contributor.authorRocca, Jorge J.
dc.contributor.authorBenware, B. R.
dc.contributor.authorArtioukov, I. A.
dc.date.accessioned2007-01-03T08:10:00Z
dc.date.available2007-01-03T08:10:00Z
dc.date.issued1999
dc.descriptionIncludes bibliographical references (pages 1500-1501).
dc.description.abstractWe report the measurement of the optical constants of Si, GaP, InP, GaAs, GaAsP, and Ir at a wavelength of 46.9nm (26.5 eV). The optical constants were obtained from the measurement of the variation of the reflectivity as a function of angle utilizing, as an illumination source, a discharge pumped 46.9-nm table-top laser operated at a repetition rate of 1 Hz. These measurements constitute the first application of an ultrashort wavelength laser to materials research.
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dc.format.mediumarticles
dc.identifier.bibliographicCitationArtioukov, I. A., et al., Determination of XUV Optical Constants by Reflectometry Using a High-Repetition Rate 46.9-nm Laser, IEEE Journal of Selected Topics in Quantum Electronics 5, no. 6 (November/December 1999): 1495-1501.
dc.identifier.urihttp://hdl.handle.net/10217/67528
dc.languageEnglish
dc.publisherColorado State University. Libraries
dc.publisher.originalIEEE
dc.relation.ispartofFaculty Publications - Department of Electrical and Computer Engineering
dc.rights©1999 IEEE
dc.subjectSoft X-ray laser
dc.subjectXUV optical constants
dc.subjectXUV reflectometry
dc.titleDetermination of XUV optical constants by reflectometry using a high-repetition rate 46.9-nm laser
dc.typeText


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