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Determination of XUV optical constants by reflectometry using a high-repetition rate 46.9-nm laser

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dc.contributor.authorVinogradov, A. V., author
dc.contributor.authorUspenskii, Yu. A., author
dc.contributor.authorForsythe, M., author
dc.contributor.authorRocca, Jorge J., author
dc.contributor.authorBenware, B. R., author
dc.contributor.authorArtioukov, I. A., author
dc.contributor.authorIEEE, publisher
dc.date.accessioned2007-01-03T08:10:00Z
dc.date.available2007-01-03T08:10:00Z
dc.date.issued1999
dc.description.abstractWe report the measurement of the optical constants of Si, GaP, InP, GaAs, GaAsP, and Ir at a wavelength of 46.9nm (26.5 eV). The optical constants were obtained from the measurement of the variation of the reflectivity as a function of angle utilizing, as an illumination source, a discharge pumped 46.9-nm table-top laser operated at a repetition rate of 1 Hz. These measurements constitute the first application of an ultrashort wavelength laser to materials research.
dc.format.mediumborn digital
dc.format.mediumarticles
dc.identifier.bibliographicCitationArtioukov, I. A., et al., Determination of XUV Optical Constants by Reflectometry Using a High-Repetition Rate 46.9-nm Laser, IEEE Journal of Selected Topics in Quantum Electronics 5, no. 6 (November/December 1999): 1495-1501.
dc.identifier.urihttp://hdl.handle.net/10217/67528
dc.languageEnglish
dc.language.isoeng
dc.publisherColorado State University. Libraries
dc.relation.ispartofFaculty Publications
dc.rights©1999 IEEE.
dc.rightsCopyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright.
dc.subjectSoft X-ray laser
dc.subjectXUV optical constants
dc.subjectXUV reflectometry
dc.titleDetermination of XUV optical constants by reflectometry using a high-repetition rate 46.9-nm laser
dc.typeText

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