Determination of XUV optical constants by reflectometry using a high-repetition rate 46.9-nm laser

Vinogradov, A. V., author; Uspenskii, Yu. A., author; Forsythe, M., author; Rocca, Jorge J., author; Benware, B. R., author; Artioukov, I. A., author; IEEE, publisher

Determination of XUV optical constants by reflectometry using a high-repetition rate 46.9-nm laser

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ECEjjr00066.pdf (166.32 KB)

Date

1999

Authors

Vinogradov, A. V., author

Uspenskii, Yu. A., author

Forsythe, M., author

Rocca, Jorge J., author

Benware, B. R., author

Artioukov, I. A., author

IEEE, publisher

Abstract

We report the measurement of the optical constants of Si, GaP, InP, GaAs, GaAsP, and Ir at a wavelength of 46.9nm (26.5 eV). The optical constants were obtained from the measurement of the variation of the reflectivity as a function of angle utilizing, as an illumination source, a discharge pumped 46.9-nm table-top laser operated at a repetition rate of 1 Hz. These measurements constitute the first application of an ultrashort wavelength laser to materials research.

Subject

Soft X-ray laser

XUV optical constants

XUV reflectometry

URI

http://hdl.handle.net/10217/67528

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Determination of XUV optical constants by reflectometry using a high-repetition rate 46.9-nm laser

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