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    Conformal step coverage of electron beam-assisted CVD of SiO2 and Si3N4 films

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    http://hdl.handle.net/10217/67450
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    Abstract
    We have recently reported electron beam assisted chemical vapor deposition (CVD) of silicon dioxide (SiO2) and silicon nitride(Si3N4) films at low (200°C) substrate temperatures(1,2,3). Herein, we examine the ability of the electron beam deposition technique to conformally cover patterned aluminum and polysilicon steps.
    Author(s)
    Collins, G. J.; Emery, K.; Rocca, Jorge J.; Bishop, D.; Gobis, L.; Thompson, L. R.

    Date Issued
    1984
    Format
    born digital; articles
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    • Faculty Publications - Department of Electrical and Computer Engineering

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