Conformal step coverage of electron beam-assisted CVD of SiO2 and Si3N4 films
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Abstract
We have recently reported electron beam assisted chemical vapor deposition (CVD) of silicon dioxide (SiO2) and silicon nitride(Si3N4) films at low (200°C) substrate temperatures(1,2,3). Herein, we examine the ability of the electron beam deposition technique to conformally cover patterned aluminum and polysilicon steps.