Conformal step coverage of electron beam-assisted CVD of SiO2 and Si3N4 films
| dc.contributor.author | Collins, G. J., author | |
| dc.contributor.author | Emery, K., author | |
| dc.contributor.author | Rocca, Jorge J., author | |
| dc.contributor.author | Bishop, D., author | |
| dc.contributor.author | Gobis, L., author | |
| dc.contributor.author | Thompson, L. R., author | |
| dc.contributor.author | ECS - The Electrochemical Society, publisher | |
| dc.date.accessioned | 2007-01-03T08:09:53Z | |
| dc.date.available | 2007-01-03T08:09:53Z | |
| dc.date.issued | 1984 | |
| dc.description.abstract | We have recently reported electron beam assisted chemical vapor deposition (CVD) of silicon dioxide (SiO2) and silicon nitride(Si3N4) films at low (200°C) substrate temperatures(1,2,3). Herein, we examine the ability of the electron beam deposition technique to conformally cover patterned aluminum and polysilicon steps. | |
| dc.format.medium | born digital | |
| dc.format.medium | articles | |
| dc.identifier.bibliographicCitation | Thomspon, L. R., et al., Conformal Step Coverage of Electron Beam‐Assisted CVD of SiO2 and Si3 N 4 Films, [Journal of the Electrochemical Society 131, no. 2 (1984)]: 462-463. | |
| dc.identifier.uri | http://hdl.handle.net/10217/67450 | |
| dc.language | English | |
| dc.language.iso | eng | |
| dc.publisher | Colorado State University. Libraries | |
| dc.relation.ispartof | Faculty Publications | |
| dc.rights | ©1984 ECS - The Electrochemical Society. | |
| dc.rights | Copyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright. | |
| dc.title | Conformal step coverage of electron beam-assisted CVD of SiO2 and Si3N4 films | |
| dc.type | Text |
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