A review of microelectronic film deposition using direct and remote electron-beam-generated plasmas
Date
1990
Authors
Collins, George J., author
Lin, Chongjie, author
Zarnani, Hamid, author
Sheng, Tien Yu, author
Luo, Zongnan, author
Zu, Zengqi, author
IEEE, publisher
Journal Title
Journal ISSN
Volume Title
Abstract
Soft-vacuum-generated electron beams employed to create a large area plasma for assisting chemical vapor deposition (CVD) of thin films are reviewed. The electron beam plasma is used both directly, where electron impact dissociation of feedstock gases plays a dominant role, and indirectly in a downstream afterglow, where electron impact dissociation of feedstock reactants plays no role. Rather, photodissociation and metastable atom-molecule reactions dominate in the downstream afterglow. To better understand electron-beam-created plasmas using a slotted ring cathode, the transmitted beam spatial intensity profiles have been quantified from initial generation at a slotted line-shaped cold cathode through acceleration in the cathode sheath and propagation in the ambient gas. To better understand the role of photodissociation in downstream plasma-assisted CVD, the VUV output spectrum and VUV generation efficiency from electron-beam-excited plasmas have been measured. The properties of films deposited via both direct electron-beam-generated plasma-assisted CVD and downstream afterglow CVD are reviewed and compared to conventional plasma assisted CVD films.
Description
Rights Access
Subject
electron beam effects
plasma CVD
plasma CVD coatings
reviews
plasma-beam interactions