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A transient, three-dimensional numerical study of chemical vapor deposition in batch reactors

dc.contributor.authorWangard, William, III, author
dc.contributor.authorDandy, D. S., advisor
dc.contributor.authorBurns, Patrick J., advisor
dc.date.accessioned2026-05-07T18:06:42Z
dc.date.issued2001
dc.description.abstractA time-accurate model of multicomponent reacting flow with homogeneous and heterogeneous chemical reactions was developed to simulate the transport phenomena, gas-phase chemistry, and deposition profiles in constant-volume chemical vapor deposition reactors with arbitrarily complex geometry in two or three dimensions. A fully rigorous multicomponent gas transport model including thermal diffusion was used. A transformation was applied to the matrix of ordinary diffusion coefficients to form a matrix of effective ordinary diffusion coefficients. This transformation permitted a decoupling of the species continuity equations from one another. A first-order, time-accurate splitting procedure was used to integrate the species and energy equations, which were stiff due to terms arising from the homogeneous and heterogeneous chemical reactions. The stiff equations were solved with the CVODE library. A variable-density projection method was used to solve the variable-property momentum equations. The partial differential equations describing the model were discretized using a conservative finite difference method implemented on overset grids. The overset method was used to obtain solutions on arbitrarily complex geometrical domains. A computer code was developed using the OVERTURE object-oriented class library. The CHEMKIN library was used to compute thermodynamic properties of multicomponent mixtures of ideal gases and homogeneous reaction rates. The CHEMKIN TRANSPORT library was used to compute multicomponent transport properties. The SURFACE CHEMKIN library was used to compute the heterogeneous reaction rates. Numerical simulations included natural convection in two-dimensional horizontal and tilted reactors, chemical vapor deposition in a three-dimensional reactor with a heterogeneous chemistry, chemical vapor deposition in a two-dimensional reactor with moderately complex homogeneous and heterogeneous chemistry, and a CPU timing study with a system with a complicated homogeneous and heterogeneous reaction model. Results indicated that the solver obtained accurate solutions in CVD batch systems having complicated homogeneous and heterogeneous reaction models for both small and moderate Rayleigh number flows.
dc.format.mediumdoctoral dissertations
dc.identifier.urihttps://hdl.handle.net/10217/244372
dc.identifier.urihttps://doi.org/10.25675/3.026967
dc.languageEnglish
dc.language.isoeng
dc.publisherColorado State University. Libraries
dc.relation.ispartof2000-2019
dc.rightsCopyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright.
dc.rights.licensePer the terms of a contractual agreement, all use of this item is limited to the non-commercial use of Colorado State University and its authorized users.
dc.subjectmechanical engineering
dc.subjectchemical engineering
dc.titleA transient, three-dimensional numerical study of chemical vapor deposition in batch reactors
dc.typeText
dcterms.rights.dplaThis Item is protected by copyright and/or related rights (https://rightsstatements.org/vocab/InC/1.0/). You are free to use this Item in any way that is permitted by the copyright and related rights legislation that applies to your use. For other uses you need to obtain permission from the rights-holder(s).
thesis.degree.disciplineMechanical Engineering
thesis.degree.grantorColorado State University
thesis.degree.levelDoctoral
thesis.degree.nameDoctor of Philosophy (Ph.D.)

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