Low-energy broad area electron beam for etching microelectronic materials
| dc.contributor.author | Rocca, Jorge J., author | |
| dc.contributor.author | Verhey, T. R., author | |
| dc.contributor.author | Boyer, P. K., author | |
| dc.contributor.author | American Institute of Physics, publisher | |
| dc.date.accessioned | 2007-01-03T08:10:13Z | |
| dc.date.available | 2007-01-03T08:10:13Z | |
| dc.date.issued | 1987 | |
| dc.description.abstract | We have generated beams with electron current densities of more than 10 mA/cm2 at energies between 150 and 900 eV using a plasma source. This electron source can be operated at background pressures between 0.01 and 0.1 Torr in helium and with the addition of various gases, producing electron beams up to 3.8 cm in diameter. The broad area beam can be used to induce gas phase and surface reactions and has been successfully used to achieve anisotropic etching of SiO2 films in the reactant gas CF4. | |
| dc.format.medium | born digital | |
| dc.format.medium | articles | |
| dc.identifier.bibliographicCitation | Verhey, T. R., J. J. Rocca, and P. K. Boyer, Low-Energy Broad Area Electron Beam for Etching Microelectronic Materials, Journal of Applied Physics 62, no. 7 (1 October 1987): 3001-3005. | |
| dc.identifier.uri | http://hdl.handle.net/10217/67640 | |
| dc.language | English | |
| dc.language.iso | eng | |
| dc.publisher | Colorado State University. Libraries | |
| dc.relation.ispartof | Faculty Publications | |
| dc.rights | ©1987 American Institute of Physics. | |
| dc.rights | Copyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright. | |
| dc.title | Low-energy broad area electron beam for etching microelectronic materials | |
| dc.type | Text |
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