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Epitaxial ternary RexMo1-xSi2 thin films on Si(100)

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dc.contributor.authorVantomme, André, author
dc.contributor.authorLong, Robert G., author
dc.contributor.authorNicolet, Marc-A., author
dc.contributor.authorMahan, John E., author
dc.contributor.authorAmerican Institute of Physics, publisher
dc.date.accessioned2007-01-03T08:10:30Z
dc.date.available2007-01-03T08:10:30Z
dc.date.issued1994
dc.description.abstractReactive deposition epitaxy was used to synthesize thin layers of RexMo1-xSi2 on Si(100). In the case of x>=1, ReSi2 layers of excellent crystalline quality have been reported previously [J.E. Mahan, K. M. Geib, G. Y. Robinson, R. G. Long, Y. Xinghua, G. Bai, and M.-A. Nicolet, Appl. Phys. Lett. 56, 2439 (1990)]. In the case of x=0, however, virtually no alignment of theMoSi2 and the substrate is found, although this silicide is nearly isomorphic to ReSi2. For intermediate values of x, highly epitaxial ternary silicides are obtained, at least for a Mo fraction up to 1/3.
dc.format.mediumborn digital
dc.format.mediumarticles
dc.identifier.bibliographicCitationVantomme, André, et al., Epitaxial Ternary RexMo1-xSi2 Thin Films on Si(100), Journal of Applied Physics 75, no. 8 (15 April 1994): 3924-3927.
dc.identifier.urihttp://hdl.handle.net/10217/67932
dc.languageEnglish
dc.language.isoeng
dc.publisherColorado State University. Libraries
dc.relation.ispartofFaculty Publications
dc.rights©1994 American Institute of Physics.
dc.rightsCopyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright.
dc.titleEpitaxial ternary RexMo1-xSi2 thin films on Si(100)
dc.typeText

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