Synthesis of monolayer MoS₂ via chemical vapor deposition
| dc.contributor.author | Varra, Travis, author | |
| dc.contributor.author | Sambur, Justin, advisor | |
| dc.contributor.author | Prieto, Amy, committee member | |
| dc.contributor.author | Yourdkhani, Mostafa, committee member | |
| dc.date.accessioned | 2020-06-22T11:53:06Z | |
| dc.date.available | 2020-06-22T11:53:06Z | |
| dc.date.issued | 2020 | |
| dc.description.abstract | Two-dimensional materials, specifically transition metal dichalcogenides (TMDs), have emerged as ideal candidates for lightweight and flexible optoelectronic applications. Unlike bulk solids, single layer TMDs exhibit a direct bandgap that makes next-generation device applications possible. This work describes the synthesis of single layer MoS2 via chemical vapor deposition (CVD). This method involves thermal vaporization of MoO3 and S precursors in a tube furnace. The influence of reaction conditions (e.g., temperature, pressure, reaction holding time, carrier gas flow rate, and precursor separation distance) on MoS2 sample morphology was quantified using optical microscopy. Isolated equilateral triangles with 11 μm-long edge lengths were reproducibly grown on Si/SiO2 substrates. The layer thickness was determined using Raman and photoluminescence spectroscopy. | |
| dc.format.medium | born digital | |
| dc.format.medium | masters theses | |
| dc.identifier | Varra_colostate_0053N_16067.pdf | |
| dc.identifier.uri | https://hdl.handle.net/10217/208516 | |
| dc.language | English | |
| dc.language.iso | eng | |
| dc.publisher | Colorado State University. Libraries | |
| dc.relation.ispartof | 2020- | |
| dc.rights | Copyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright. | |
| dc.subject | monolayer | |
| dc.subject | spectroscopy | |
| dc.subject | TMDs | |
| dc.subject | MoS2 | |
| dc.subject | microscopy | |
| dc.subject | synthesis | |
| dc.title | Synthesis of monolayer MoS₂ via chemical vapor deposition | |
| dc.type | Text | |
| dcterms.rights.dpla | This Item is protected by copyright and/or related rights (https://rightsstatements.org/vocab/InC/1.0/). You are free to use this Item in any way that is permitted by the copyright and related rights legislation that applies to your use. For other uses you need to obtain permission from the rights-holder(s). | |
| thesis.degree.discipline | Chemistry | |
| thesis.degree.grantor | Colorado State University | |
| thesis.degree.level | Masters | |
| thesis.degree.name | Master of Science (M.S.) |
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