Electron beam assisted CVD of silicon dioxide and silicon nitride films
Date
1984
Authors
Emery, K., author
Rocca, Jorge J., author
Thompson, L. R., author
Collins, G. J., author
Society for Photo-Optical Instrumentation Engineers, publisher
Journal Title
Journal ISSN
Volume Title
Abstract
A glow discharge electron beam has been used to deposit silicon dioxide (SiO2) and silicon nitride(Si3N4) films for microelectronic applications. Electron beam assisted CVD is a new technique in which the reaction volume is defined mainly by the geometry of the electron beam and offers the possibility of uniform deposition over large areas. The SiO2films were deposited in silane-nitrous oxide-nitrogen mixtures, and the Si3N4 films were deposited in silane ammonia-nitrogen mixtures. The films were deposited with a 2-4 kV electron beam parallel to the sample, at 0.1-1 Torr pressures, and at substrate temperatures from 50-400°C. The index of refraction, sthoichiometry, pinhole density, etch rate, conformal step coverage, and hydrogen bonding were measured.