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Low threshold voltage vertical cavity surface-emitting laser

dc.contributor.authorChalmers, S. A., author
dc.contributor.authorLear, Kevin L., author
dc.contributor.authorKilleen, K. P., author
dc.contributor.authorIEE, publisher
dc.date.accessioned2007-01-03T08:10:21Z
dc.date.available2007-01-03T08:10:21Z
dc.date.issued1993
dc.description.abstractVertical-cavity surface emitting laser diodes with threshold voltages as low as 1•48 V are demonstrated. The devices have low-resistance epitaxial mirrors, and current passes through the entire mirror stack. The low threshold voltage results from both low threshold current densities and mirrors with low resistivities even at low current densities. The laser fabrication sequence is relatively quick and simple and allows for the rapid characterization of vertical-cavity surface-emittin glaser material.
dc.format.mediumborn digital
dc.format.mediumarticles
dc.identifier.bibliographicCitationLear, K. L., S. A. Chalmers, and K. P. Killeen, Low Threshold Voltage Vertical Cavity Surface-Emitting Laser, Electronics Letters 29, no. 7 (1 April 1993): 584-586.
dc.identifier.urihttp://hdl.handle.net/10217/67868
dc.languageEnglish
dc.language.isoeng
dc.publisherColorado State University. Libraries
dc.relation.ispartofFaculty Publications
dc.rights©1993 IEE.
dc.rightsCopyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright.
dc.subjectlasers
dc.subjectsemiconductor lasers
dc.titleLow threshold voltage vertical cavity surface-emitting laser
dc.typeText

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