Spontaneous emission factor in oxide confined vertical-cavity lasers
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Authors
Hou, Hong Q., author
Lear, Kevin L., author
Kuksenkov, D. V., author
American Institute of Physics, publisher
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Abstract
We report on measurements of the spontaneous emission factor for oxide-confined InGaAs vertical cavity surface emitting lasers. The spontaneous emission factor is determined as a function of the active layer volume from the measurement of small-signal harmonic distortion at threshold. For a 3×3 µm oxide aperture device we obtain spontaneous emission factor of 4.2• 10-2 at room temperature.
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Subject
semiconductor lasers
mode control
laser cavities
design
gallium arsenides
indium arsenides
emission spectra
infrared radiation
harmonics
apertures