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Efficient room-temperature continuous-wave AlGaInP/AlGaAs visible (670 nm) vertical-cavity surface-emitting laser diodes

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dc.contributor.authorMalloy, K. J., author
dc.contributor.authorFigiel, J. J., author
dc.contributor.authorLear, Kevin L., author
dc.contributor.authorLott, J. A., author
dc.contributor.authorChoquette, Kent D., author
dc.contributor.authorSchneider, Richard P., author
dc.contributor.authorIEEE, publisher
dc.date.accessioned2007-01-03T04:43:04Z
dc.date.available2007-01-03T04:43:04Z
dc.date.issued1994
dc.description.abstractSignificant improvement in the performance of AlGaInP/AlGaAs visible vertical-cavity surface-emitting laser diodes has been achieved in gain-guided planar-geometry devices utilizing proton implants to define the current injection path. Threshold currents as low as 1.25 mA were measured on 10 μm-diameter devices, with maximum power output of 0.33 mW from larger devices. Continuous-wave (cw) lasing was achieved at temperatures as high as 45°C. The improved diode performance is attributed to better lateral heat-sinking and reduced parasitic heat generation afforded by the planar device structure, relative to previously-reported air-post structures. This work represents the first realization of efficient room-temperature operation of AlGaInP-based visible VCSEL diodes.
dc.description.sponsorshipThis work was performed at Sandia National Laboratories under D.O.E. contract No. DE-AC04-94AL85000. J. A. L. acknowledges additional support from the Air Force Institute of Technology, Wright-Patterson AFB, OH.
dc.format.mediumborn digital
dc.format.mediumarticles
dc.identifier.bibliographicCitationSchneider, R. P., et al., Efficient Room-Temperature Continuous-Wave AIGaInP/AIGaAs Visible (670 nm) Vertical-Cavity Surface-Emitting Laser Diodes, IEEE Photonics Technology Letters 6, no. 3 (March 1994): 313-316.
dc.identifier.urihttp://hdl.handle.net/10217/835
dc.languageEnglish
dc.language.isoeng
dc.publisherColorado State University. Libraries
dc.relation.ispartofFaculty Publications
dc.rights©1994 IEEE.
dc.rightsCopyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright.
dc.subjectIII-V semiconductors
dc.subjectaluminium compounds
dc.subjectgallium arsenide
dc.subjectindium compounds
dc.subjectlaser cavity resonators
dc.subjectsemiconductor lasers
dc.titleEfficient room-temperature continuous-wave AlGaInP/AlGaAs visible (670 nm) vertical-cavity surface-emitting laser diodes
dc.typeText

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