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Selectively oxidised vertical cavity surface emitting lasers with 50% power conversion efficiency

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dc.contributor.authorGeib, K. M., author
dc.contributor.authorKilcoyne, S. P., author
dc.contributor.authorSchneider, R. P., author
dc.contributor.authorChoquette, K. D., author
dc.contributor.authorLear, Kevin L., author
dc.contributor.authorIEE, publisher
dc.date.accessioned2007-01-03T08:10:21Z
dc.date.available2007-01-03T08:10:21Z
dc.date.issued1995
dc.description.abstractIndex-guided vertical cavity top-surface emitting laser diodes have been fabricated from an all epitaxial structure with conducting mirrors by selective lateral oxidation of AlGaAs. Low voltage, a 78% slope efficiency, and a 350μA threshold current in a single device combine to yield a maximum power conversion efficiency of 50% at less than a 2mA drive current. The device operates in a single mode up to 1.5mW.
dc.format.mediumborn digital
dc.format.mediumarticles
dc.identifier.bibliographicCitationLear, K. L., et al., Selectively Oxidised Vertical Cavity Surface Emitting Lasers with 50% Power Conversion Efficiency, Electronics Letters 31, no. 3 (2 February 1995): 208-209.
dc.identifier.urihttp://hdl.handle.net/10217/67870
dc.languageEnglish
dc.language.isoeng
dc.publisherColorado State University. Libraries
dc.relation.ispartofFaculty Publications
dc.rights©1995 IEE.
dc.rightsCopyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright.
dc.subjectlasers
dc.subjectvertical cavity surface emitting lasers
dc.titleSelectively oxidised vertical cavity surface emitting lasers with 50% power conversion efficiency
dc.typeText

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