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Determination of the interfacial electronic structure and morphology of organic semiconductor materials

dc.contributor.authorSchroeder, Paul G., author
dc.contributor.authorParkinson, Bruce, advisor
dc.contributor.authorBernstein, Elliot, committee member
dc.contributor.authorLevinger, Nancy, committee member
dc.contributor.authorVan Order, Alan, committee member
dc.contributor.authorLee, Siu Au, committee member
dc.date.accessioned2026-01-23T17:29:54Z
dc.date.issued2002
dc.description.abstractThin films of 𝘱-quaterphenyl, 𝘱-sexiphenyl, coronene, and pentacene were each deposited sequentially in multiple steps onto different substrates including highly oriented pyrolytic graphite (HOPG), SnS2, and A u (lll). The energy level offsets at the interfaces between each organic semiconductor film and the respective substrate were subsequently measured using a combination of X-ray and ultraviolet photoelectron spectroscopy (XPS, UPS) in sim after each growth step. The organic materials used have significantly delocalized molecular orbitals, and were chosen for their potential applications in organic semiconductor devices and that they allowed for more thorough analysis of the interface. HOPG and SnS2 are layered materials that have nearly atomically flat van der Waals surfaces that could be cleaved in vacuum allowing for fundamental investigations of interfacial dipoles and the existence of band bending effects at the interfaces of organic materials. The gold substrate allowed for more applied studies into the contact interfaces used for organic thin film transistors.
dc.description.abstractThe combined methods of UPS and XPS were used to more precisely determine the orbital offsets at the organic interfaces by separating out band bending, or final state screening related shifts, from the total work function measured with UPS. In addition, a method using low intensity XPS work function measurements was successfully developed to separate out sample charging artifacts from the true shifts.
dc.description.abstractSeveral of these systems, particularly those consisting of pentacene, were also characterized for the surface adsorption and film morphology using scanning tunneling microscopy (STM), atomic force microscopy (AFM), and temperature programmed desorption (TPD). The STM images revealed ordering of pentacene in several distinct unit cells with respect to the Au (lll) surface. Different growth patterns of pentacene deposited on Au(lll) and SnS2 were observed based on the analysis of the ultra-violet photoelectron spectra and AFM.
dc.format.mediumborn digital
dc.format.mediumdoctoral dissertations
dc.identifierETDF_2002_Schroeder_3053450.pdf
dc.identifier.urihttps://hdl.handle.net/10217/242885
dc.identifier.urihttps://doi.org/10.25675/3.025742
dc.languageEnglish
dc.language.isoeng
dc.publisherColorado State University. Libraries
dc.relation.ispartof2000-2019
dc.rightsCopyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright.
dc.rights.licensePer the terms of a contractual agreement, all use of this item is limited to the non-commercial use of Colorado State University and its authorized users.
dc.subjectchemistry
dc.subjectanalytical chemistry
dc.subjectphysical chemistry
dc.titleDetermination of the interfacial electronic structure and morphology of organic semiconductor materials
dc.typeText
dcterms.rights.dplaThis Item is protected by copyright and/or related rights (https://rightsstatements.org/vocab/InC/1.0/). You are free to use this Item in any way that is permitted by the copyright and related rights legislation that applies to your use. For other uses you need to obtain permission from the rights-holder(s).
thesis.degree.disciplineChemistry
thesis.degree.grantorColorado State University
thesis.degree.levelDoctoral
thesis.degree.nameDoctor of Philosophy (Ph.D.)

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