Repository logo
 

Strain-induced modifications of the band structure of InxGa1-xP–In0.5Al0.5P multiple quantum wells

Simple item page
dc.contributor.authorFouquet, Julie Elizabeth, author
dc.contributor.authorThiagarajan, Prabhuram, author
dc.contributor.authorRobinson, Gary Y., author
dc.contributor.authorMenoni, Carmen S., author
dc.contributor.authorPatel, Dineshchandra, author
dc.contributor.authorInterholzinger, Kathryn, author
dc.contributor.authorIEEE, publisher
dc.date.accessioned2007-01-03T05:49:58Z
dc.date.available2007-01-03T05:49:58Z
dc.date.issued1998
dc.description.abstractThe effect of strain on the band structure of InxGa1-xP-In0.5Al0.5P multiple quantum wells (MQW's) has been investigated from high-pressure and low-temperature photoluminescence measurements. The biaxial strain in the wells was varied between +0.6% compressive to -0.85% tensile strain by changing the well composition x from 0.57 to 0.37. Strain increases the valence band offsets in either tensile or compressively strained structures. Whereas relatively insensitive to tensile strain, the valence band offsets showed a strong dependence on the magnitude of the compressive strain. Good agreement is found between the measured valence band offsets and those predicted by the model solid theory, except for the largest compressively strained MQW's, for which the model calculations underestimate the measured valence band offset. Strain and the associated variations in composition also modified the separation among the well states associated with Γ1c, L1c, and X1c. From these results, the bandgaps of each conduction band extrema were calculated in InxGa1-xP for 0.37 < x < 0.57 and compared with the predictions of the model solid theory.
dc.description.sponsorshipThis work was supported by the National Science Foundation under Grant DMR 9321422 and Grant ECS-9502888, and by the AFOSR under Contract F49620-93-1-0021.
dc.format.mediumborn digital
dc.format.mediumarticles
dc.identifier.bibliographicCitationInterholzinger, Kathryn, et al., Strain-Induced Modifications of the Band Structure of InχGa1–χP-In0.5Al0.5P Multiple Quantum Wells, IEEE Journal of Quantum Electronics 34, no. 1 (January 1998): 93-100.
dc.identifier.urihttp://hdl.handle.net/10217/537
dc.languageEnglish
dc.language.isoeng
dc.publisherColorado State University. Libraries
dc.relation.ispartofFaculty Publications
dc.rights©1998 IEEE.
dc.rightsCopyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright.
dc.subjectquantum wells
dc.subjectstrain
dc.subjectheterojunctions
dc.subjectphotoluminescent materials/devices
dc.subjectpressure measurements
dc.subjectsemiconductor heterojunctions
dc.titleStrain-induced modifications of the band structure of InxGa1-xP–In0.5Al0.5P multiple quantum wells
dc.typeText

Files

Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
ECEcsm00002.pdf
Size:
197.02 KB
Format:
Adobe Portable Document Format
Description:
Download

Collections

Faculty Publications