Differential carrier lifetime in oxide-confined vertical cavity lasers obtained from electrical impedance measurements
Lear, Kevin L., author
Temkin, H., author
Kuksenkov, D. V., author
Giudice, G. E., author
American Institute of Physics, publisher
Differential carrier lifetime measurements were performed on index-guided oxide-confined vertical cavity surface emitting lasers operating at 980 nm. Lifetimes were extracted from laser impedance measurements at subthreshold currents, with device size as a parameter, using a simple small-signal model. The carrier lifetimes ranged from 21 ns at 9 µA, to about 1 ns at a bias close to threshold. For a 6 × 6 µm2 oxide aperture device the threshold carrier density was nth ~ 2 × 1018cm-3. The effect of carrier diffusion was also considered. An ambipolar diffusion coefficient of D ~ 11 cm2s-1 was obtained.
surface emitting lasers