Improved AlGaInP-based red (670–690 nm) surface-emitting lasers with novel C-doped short-cavity epitaxial design
Date
1995
Authors
Figiel, J. J., author
Kilcoyne, Sean Patrick, author
Lear, Kevin L., author
Choquette, Kent D., author
Crawford, Mary Hagerott, author
Schneider, Richard P., author
American Institute of Physics, publisher
Journal Title
Journal ISSN
Volume Title
Abstract
A modified epitaxial design leads to straightforward implementation of short (1λ) optical cavities and the use of C as the sole p-type dopant in AlGaInP/AlGaAs red vertical-cavity surface-emitting lasers (VCSELs). Red VCSELs fabricated into simple etched air posts operate continuous wave at room temperature at wavelengths between 670 and 690 nm, with a peak output power as high as 2.4 mW at 690 nm, threshold voltage of 2.2 V, and peak wallplug efficiency of 9%. These values are all significant improvements over previous results achieved in the same geometry with an extended optical cavity epitaxial design. The improved performance is due primarily to reduced optical losses and improved current constriction and dopant stability.
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Subject
gallium phosphides
aluminium phosphides, indium phosphides
semiconductor lasers
laser cavities
superlattices
crystal doping
carbon additions
epitaxy
fabrication
design