Optical properties of semiconducting iron disilicide thin films
dc.contributor.author | Bost, M. C., author | |
dc.contributor.author | Mahan, John E., author | |
dc.contributor.author | American Institute of Physics, publisher | |
dc.date.accessioned | 2007-01-03T08:10:30Z | |
dc.date.available | 2007-01-03T08:10:30Z | |
dc.date.issued | 1985 | |
dc.description.abstract | Iron disilicide thin films were prepared by furnace reaction of ion beam sputtered iron layers with single-crystal silicon wafers and with low-pressure chemical vapor deposition (LPCVD) polycrystalline silicon thin films. X-ray diffraction indicates the films are single-phase, orthorhombic, β-FeSi2. Impurity levels are below the detection limit of Auger spectroscopy. Normal incidence spectral transmittance and reflectance data indicate a minimum, direct energy gap of 0.87 eV. The apparent thermal activation energy of the resistivity in the intrinsic regime is about half of this minimum optical gap. With such a direct band gap, the material may be suitable for the development of both light-sensitive and light-emitting thin-film devices within the silicon microelectronics technology. | |
dc.format.medium | born digital | |
dc.format.medium | articles | |
dc.identifier.bibliographicCitation | Bost, M. C., and J. E. Mahan, Optical Properties of Semiconducting Iron Disilicide Thin Films, Journal of Applied Physics 58, no. 7 (1 October 1985): 2696-2703. | |
dc.identifier.uri | http://hdl.handle.net/10217/67929 | |
dc.language | English | |
dc.language.iso | eng | |
dc.publisher | Colorado State University. Libraries | |
dc.relation.ispartof | Faculty Publications | |
dc.rights | ©1985 American Institute of Physics. | |
dc.rights | Copyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright. | |
dc.title | Optical properties of semiconducting iron disilicide thin films | |
dc.type | Text |
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