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Optical properties of semiconducting iron disilicide thin films

dc.contributor.authorBost, M. C., author
dc.contributor.authorMahan, John E., author
dc.contributor.authorAmerican Institute of Physics, publisher
dc.date.accessioned2007-01-03T08:10:30Z
dc.date.available2007-01-03T08:10:30Z
dc.date.issued1985
dc.description.abstractIron disilicide thin films were prepared by furnace reaction of ion beam sputtered iron layers with single-crystal silicon wafers and with low-pressure chemical vapor deposition (LPCVD) polycrystalline silicon thin films. X-ray diffraction indicates the films are single-phase, orthorhombic, β-FeSi2. Impurity levels are below the detection limit of Auger spectroscopy. Normal incidence spectral transmittance and reflectance data indicate a minimum, direct energy gap of 0.87 eV. The apparent thermal activation energy of the resistivity in the intrinsic regime is about half of this minimum optical gap. With such a direct band gap, the material may be suitable for the development of both light-sensitive and light-emitting thin-film devices within the silicon microelectronics technology.
dc.format.mediumborn digital
dc.format.mediumarticles
dc.identifier.bibliographicCitationBost, M. C., and J. E. Mahan, Optical Properties of Semiconducting Iron Disilicide Thin Films, Journal of Applied Physics 58, no. 7 (1 October 1985): 2696-2703.
dc.identifier.urihttp://hdl.handle.net/10217/67929
dc.languageEnglish
dc.language.isoeng
dc.publisherColorado State University. Libraries
dc.relation.ispartofFaculty Publications
dc.rights©1985 American Institute of Physics.
dc.rightsCopyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright.
dc.titleOptical properties of semiconducting iron disilicide thin films
dc.typeText

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