Repository logo
 

NMOS device characteristics in electron-beam-recrystallized SOI

Simple item page
dc.contributor.authorMeyer, Jack D., author
dc.contributor.authorFukumoto, Jay T., author
dc.contributor.authorMoore, Cameron Alden, author
dc.contributor.authorCollins George J., author
dc.contributor.authorBuser, James R., author
dc.contributor.authorThompson, Lance Robert, author
dc.contributor.authorIEEE, publisher
dc.date.accessioned2007-01-03T07:27:54Z
dc.date.available2007-01-03T07:27:54Z
dc.date.issued1993
dc.description.abstractCharacteristics of n-channel MOSFET's fabricated in cold cathode electron-beam-recrystallized silicon-on-oxide layers have been examined. Assorted crystallographic defects exist in the recrystallized silicon layer ranging from highly branched subgrain boundaries to widely spaced parallel subgrains and rows of threading dislocations. Some of these MOSFET transistors have characteristics approaching those fabricated in bulk silicon including = 828-cm2/V • s electron surface mobilities and 130-mV/ decade inverse subthreshold slopes. However, many of the devices tested exhibited leakage currents up to 10-6 A/µm, resulting in high inverse subthreshold slopes and reduced threshold voltages. Some effects of crystal imperfections on device behavior are discussed.
dc.format.mediumborn digital
dc.format.mediumarticles
dc.identifier.bibliographicCitationThompson, Lance R., et al., nmOS Device Characteristics in Electron-Beam-Recrystallized SOI, IEEE Transactions on Electron Devices 40, no. 7 (July 1993): 1270-1276.
dc.identifier.urihttp://hdl.handle.net/10217/631
dc.languageEnglish
dc.language.isoeng
dc.publisherColorado State University. Libraries
dc.relation.ispartofFaculty Publications
dc.rights©1993 IEEE.
dc.rightsCopyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright.
dc.subjectcarrier mobility
dc.subjectdislocations
dc.subjectelectron beam applications
dc.subjectgrain boundaries
dc.subjectinsulated gate field effect transistors
dc.subjectleakage currents
dc.subjectrecrystallisation annealing
dc.subjectsemiconductor-insulator boundaries
dc.titleNMOS device characteristics in electron-beam-recrystallized SOI
dc.typeText

Files

Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
ECEgjc00006.pdf
Size:
701.71 KB
Format:
Adobe Portable Document Format
Description:
Download

Collections

Faculty Publications