Nonresonant tunneling in InGaP/InAlP asymmetric double quantum wells

Robinson, G. Y., author; Woods, M., author; Hafich, M. J., author; Rocca, Jorge J., author; Menoni, C. S., author; Chilla, J. L. A., author; Buccafusca, O., author; American Institute of Physics, publisher

Nonresonant tunneling in InGaP/InAlP asymmetric double quantum wells

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ECEjjr00114.pdf (272.19 KB)

Date

1993

Authors

Robinson, G. Y., author

Woods, M., author

Hafich, M. J., author

Rocca, Jorge J., author

Menoni, C. S., author

Chilla, J. L. A., author

Buccafusca, O., author

American Institute of Physics, publisher

Abstract

Nonresonant tunneling rates have been measured in InGaP/InAlP asymmetric double quantum-well structures for which optical phonon assisted tunneling is energetically forbidden. For an initial photoexcited carrier density of 2.4 × 1011 cm-2, tunneling times of 220, 60, and less than 9 ps have been measured in samples with barrier thickness 4.5, 3.0, and 1.5 nm, respectively. The tunneling times were found to be strongly dependent on carrier density. The measured tunneling times and their dependence on carrier density are compatible with impurity scattering being the dominant mechanism assisting the tunneling.

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http://hdl.handle.net/10217/67647

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Nonresonant tunneling in InGaP/InAlP asymmetric double quantum wells

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