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High-frequency modulation of oxide-confined vertical cavity surface emitting lasers

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dc.contributor.authorGeib, K. M., author
dc.contributor.authorSchneider, R. P., author
dc.contributor.authorKilcoyne, S. P., author
dc.contributor.authorChoquette, K. D., author
dc.contributor.authorMar, A., author
dc.contributor.authorLear, Kevin L., author
dc.contributor.authorIEE, publisher
dc.date.accessioned2007-01-03T08:10:21Z
dc.date.available2007-01-03T08:10:21Z
dc.date.issued1996
dc.description.abstractHigh-speed studies of packaged, submilliampere threshold, oxide-confined vertical cavity surface emitting lasers show modulation bandwidths > 16GHz. Very high modulation current efficiency factors occur at low bias but decrease as the modulation bandwidth and frequency of the relative intensity noise peak saturate at higher currents.
dc.format.mediumborn digital
dc.format.mediumarticles
dc.identifier.bibliographicCitationLear, K. L., et al., High-Frequency Modulation of Oxide-Confined Vertical Cavity Surface Emitting Lasers, Electronics Letters 32, no. 5 (29 February 1996): 457-458.
dc.identifier.urihttp://hdl.handle.net/10217/67873
dc.languageEnglish
dc.language.isoeng
dc.publisherColorado State University. Libraries
dc.relation.ispartofFaculty Publications
dc.rights©1996 IEE.
dc.rightsCopyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright.
dc.subjectvertical cavity surface emitting lasers
dc.subjectsemiconductor junction lasers
dc.subjectoptical modulation
dc.titleHigh-frequency modulation of oxide-confined vertical cavity surface emitting lasers
dc.typeText

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