Damage from proton irradiation of vertical-cavity surface-emitting lasers
Date
Authors
Warren, Mial E., author
Lear, Kevin L., author
Hou, Hong Q., author
Choquette, Kent D., author
Taylor, Edward W., author
Schöne, Harald, author
Carson, Richard F., author
Paxton, Alan H., author
IEEE, publisher
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Abstract
Damage resulting from irradiating oxide-confined vertical-cavity surface-emitting lasers became significant (threshold shift ≈ 20%, peak power degradation ≈ 20%) at fluence levels approaching 1 × 1013 protons/cm2. The threshold current shifted to higher values, and the peak light output power decreased. Forward-current annealing led to partial recovery of the performance of two of the three lasers for which annealing was attempted. Recent results [1-3] on proton-implanted devices are summarized in a table.
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Subject
proton effects
semiconductor lasers
laser reliability
annealing
surface emitting lasers